Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Tsung-Ting Kao; Yuh-Shiuan Liu; Md. Mahbub Satter; Xiao-Hang Li; Zachary Lochner; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Shyh-Chiang Shen; Jae-Hyun Ryou; Alec M. Fischer; Yong Wei; Hongen Xie; Fernando A. Ponce

doi:10.1063/1.4829477

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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Journal article

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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Tsung-Ting Kao, Yuh-Shiuan Liu, Md. Mahbub Satter, Xiao-Hang Li, Zachary Lochner, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Shyh-Chiang Shen, Jae-Hyun Ryou, …

Applied physics letters, Vol.103(21)

18/11/2013

DOI: https://doi.org/10.1063/1.4829477

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an AlxGa1-xN-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm(2). After employing high-reflectivity SiO2/HfO2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm(2). The internal loss and threshold modal gain can be calculated as 2cm(-1) and 10.9 cm(-1), respectively. (C) 2013 AIP Publishing LLC.

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Title: Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
Creators - without role: Tsung-Ting Kao - Georgia Institute of Technology
Yuh-Shiuan Liu - Georgia Institute of Technology
Md. Mahbub Satter - Georgia Institute of Technology
Xiao-Hang Li - Georgia Institute of Technology
Zachary Lochner - Georgia Institute of Technology
P. Douglas Yoder - Georgia Institute of Technology
Theeradetch Detchprohm - Georgia Institute of Technology
Russell D. Dupuis - Georgia Institute of Technology
Shyh-Chiang Shen - Georgia Institute of Technology
Jae-Hyun Ryou - Georgia Institute of Technology
Alec M. Fischer - Arizona State University
Yong Wei - Arizona State University
Hongen Xie - Arizona State University
Fernando A. Ponce - Arizona State University
Publication Details: Applied physics letters, Vol.103(21)
Publisher: Amer Inst Physics
Number of pages: 4
Grant note: Steve W. Chaddick Endowed Chair in Electro-Optics Georgia Research Alliance FA2386-10-14152 / Defense Advanced Research Projects Agency; United States Department of Defense; Defense Advanced Research Projects Agency (DARPA)
Identifiers: 9945664008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article