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Sub-terahertz testing of silicon MOSFET
Journal article   Peer reviewed

Sub-terahertz testing of silicon MOSFET

W. Stillman, D. Veksler, T. A. Elkhatib, K. Salama, F. Guarin and M. S. Shur
Electronics letters, Vol.44(22), pp.1325-U51
2008
DOI: https://doi.org/10.1049/el:20089418

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

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