Abstract
We fabricated n-type beta-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The beta-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660 degrees C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the beta-FeSi2/Si heterojunctions. It was found that 600 degrees C is the optimum substrate temperature suitable for the photovoltaic application.