Abstract
IN2S^sub 3^ films have been grown on glass substrates by spray pyrolysis technique. The deposition was carried out in a 300-500 °C substrate temperature and the molar ratio S/In is fixed to 2. The characteristics of these films have been determined by X-ray diffraction, energy dispersive spectroscopy, atomic force microscopy and spectrophotometer. These properties are related to the substrate temperature. X-ray diffraction spectra show that the films are polycrystalline and the obtained material is IN2S^sub 3^ with a cubic phase and oriented preferentially towards (400). The film grain size increases from 25 to 31 nm whereas the microstrain decreases from 4.68 × 10^sup -3^ to 3.85 × 10^sup -3^ with increasing substrate temperature. The average surface roughness passes through a minimum at 340 °C. Optical transmission of 80 % has been achieved in the visible and near infrared regions. The band gap energy has been found in the range of 2.33-2.65 eV. The static refractive index n([lambda]), the oscillation energy gap E^sub 0^ and the dispersion energy E^sub d^ were determined by the Wemple-Didomenico model. The complex dielectric constants of IN2S^sub 3^ films have been calculated in the investigated wavelength range. It was found that the refractive index dispersion data obeyed to the single oscillator of the Wemple-Didomenico model, from which the dispersion parameters, the oscillation energy values and the high-frequency dielectric constant were determined. Hall effect measurements were carried out for higher substrate temperatures.