Abstract
Preparing a two-dimensional (2D) lateral heterostructure film with n and p-type materials in the same film with high control distribution remains challenging so far. In this paper, a lateral heterostructure film based on 2D MoS2 nanosheets (NSs) with SnSe nanoparticles (NPs) "SnSe/MoS2" is prepared via a facile one-step electrophoretic deposition method. MoS2 NSs are stacked vertically to form a film while SnSe NPs are incorporated to form nanoparticles of geometric grid-like inside the film. The film structure was confirmed through a scanning electron microscope. Such a heterostructure improves the performance of PEC hydrogen generation due to the fast separation of electron-hole pairs and hindering recombination. The short-circuit current density (J(SC)), as well as the open circuit voltage (V-OC) of heterostructure film, reaches 1.75 mA cm(-2) and 0.17 V, respectively, under a visible light illumination of 100 mW cm-2. The produced (Jph) values increase from 0.52 to 1.75 mA cm(-2) under a light intensity ranging from 10 to 100 mW.cm(-2), respectively. The grid-like structure of the SnSe/MoS2 heterostructure advantages its application for solar cells owing to the important potential difference that ensures the formation of p and n-type materials in the same film. This is the aim of our future work, where a complete synthesis of solar cells with high efficiency will be given, in which the p and n types of materials will face the sunlight directly.