Abstract
This research presents a simulation study to achieve an optimized homojunction GaAs The AlGaInP is selected as BSF layer due to high bandgap as compared to AlGaAs that is usually used in literature. Large scale of variation for doping concentration and thickness for all layers of cell have been simulated. The results show an improvement for solar cell parameters for the optimized cell as compared with the proposed one, where Jsc increases increases from 30.8 mW/cm2 to 46.86 mW/cm2, FF increases from 82.19% to 88.54% and eta increases from 22.29% to 33.94%. Which confirms the effectiveness of the doping concentration and thickness on solar cell performance.