Abstract
In this current study, hydrogen ions of fluence 5 x 10(17), 10 x 10(17) as well as 15 x 10(17) ions.cm(- 2) were irradiating PVA/ZnO films for applying the irradiated samples in optoelectronics devices. The XRD, SEM, as well as FTIR techniques were used to record the effects of hydrogen ions on the structures, morphologies, as well as functional group of the irradiated films respectively. The FTIR and XRD employed the successful fabricated of the PVA/ZnO composite that made of polyvinyl alcohol (PVA) and zinc oxide nanoparticles (ZnONPs). On the other hand, UV-Vis spectroscopic analysis was utilized to examine optical properties of the PVA/ZnO. The bandgap, absorption edge, as well as Urbach energies of pure and ion-exposed films were calculated via the Tauc's formula. By increasing hydrogen ions to 15 x 10(17) ions.cm(- 2), the Urbach tail increased from 0.36 to 0.43 eV and the optical gap decreased form 2.86 to 2.74 eV. Additionally, the non-linear dispersion properties and optical susceptibilities of pure and irradiated samples were recorded. The irradiated PVA/ZnO samples exhibited enhanced structural and linear/nonlinear optical characteristics, making them suitable for use in optoelectronics.