Abstract
Producing semi-transparent electrically conducting films are more necessary because of their extensive applications in industry and research. Here, the influences of Graphene oxide (GO) doping onto tin dioxide thin (SnO2) films are studied to be used in photovoltaic applications. The effect of GO doping concentration on the structural, optical and electrical properties of SnO2 thin films has been studied. The optical transmittance spectra of these films showed a high transparence value more than 80% in the visible region. The third-order nonlinear susceptibility χ(3) and nonlinear refractive index n2 of the pure and GO doped SnO2 thin films have been increased with increasing the GO doping concentration. A surprise results show that a sheet resistance of prepared films was decreased from 362 to 26 Ω as a doping ration increased from 0 to 7.5 wt %. Moreover, the high value of figure of merit of films has been obtained when the doping ratio equal 7.5 wt %.
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•Graphene Oxide doped Tin dioxide thin films were fabricated using spray pyrolysis technique.•Effects of Graphene Oxide on the structural, optical and electrical properties of SnO2 thin films were examined.•The third-order nonlinear susceptibility and nonlinear refractive index of the films have been investigated.•A sheet resistance of prepared films was decreased from 362 to 26 Ω.