Abstract
The fluorite-structural ferroelectric (FE) and antiferroelectric (AFE) materials exhibit promising applications in memories and energy storage devices. However, understanding frequency-dependent polarization and phase switching, which is very important for electronic device performance, is still a critical problem. Herein, frequency-dependent polarization and phase switching of the Si-doped HfO2-based metal-dielectric-metal capacitors with FE and AFE-like thin films, respectively, are investigated. The Kolmogorov-Avrami-Ishibashi (KAI) and nucleation-limited switching models are used to attain detailed information on polarization switching of Si-doped HfO2 FE thin films. Moreover, energy storage properties of Si-doped HfO2 AFE thin films are investigated at a wide measurement frequency range (50 Hz-100 kHz). Both energy storage density and energy storage efficiency decrease with increasing frequency. However, energy loss increases with increasing testing frequency.