Abstract
A p-type CuSbSe2 thin film was evaporated well on a precleared n-Si wafer via an electron beam deposition technique. The structural characteristics of the CuSbSe2 thin film were inspected by exploiting both the X-ray diffraction (XRD) and the field emission scanning electron microscope (FESEM) techniques. The electron beam deposition technique was employed to fabricate CuSbSe2/n-Si heterojunction for the first time. The heterojunction has demonstrated good rectifying properties. The dark C-V estimations have revealed that the CuSbSe2/n-Si heterojunction is an abrupt junction. The scrutiny of the dark I-V curves (at various temperatures) of the CuSbSe2/n-Si heterojunction enabled us in determining the diode parameters such as the values of the series resistance (R-s), the shunt resistance R-Sh, the barrier height (phi(b)), and the ideality factor (n). The CuSbSe2/n-Si heterojunction under the light condition with an intensity of 100 mW/cm(2) has produced a solar efficiency (eta) of 3.77%.