Abstract
GaP nanoflowers composed of numerous GaP nanowires are synthesized through heating InP and
Ga
2
O
3
powders. Crystalline GaP nanowires growing from Ga-rich particles have a cubic structure, uniform diameters of
∼
300
nm
, and lengths from several to tens of micrometers. Typically, an individual GaP nanowire displays a hexagonal prism-like morphology with ⟨111⟩ as the preferential growth direction. Cathodoluminescence measurements show that GaP nanoflowers and GaP nanowires emit at
∼
600
and
∼
750
nm
, respectively. Additional low-intensity emission peaks are observed for GaP nanoflowers at
∼
450
nm
.