Abstract
An experimental procedure was developed for the synthesis of InP nanowires through reacting InP and In
2O
3 at high temperature. In situ formed vapors containing indium and phosphor were transported to a low-temperature deposition area and, then, recrystallized in the presence of an oxide vapor, resulting in the formation of one-dimensional structures. Both deposition temperature and concentration of the oxide played an important role in determining the diameter and morphology of InP nanowires. InP nanotubes could also be synthesized when excess oxide was used. Structural analysis of the synthesized nanowires was carried out and the possible growth mechanism was proposed.