Abstract
La0.6Ca0.2Na0.2MnO3 manganite was prepared using sol-gel method. Rietveld refinement of XRD pattern indicates that the prepared sample crystallizes in the rhombohedral R3 over bar c structure. The impendence spectroscopy properties of the sample were studied by performing a series of measurements as a function of temperature and frequency of conductivity, dielectric constants, modulus, and impedance. From these measurements, the metal-semiconductor behavior was observed for the sample at a transition temperature of the order of 240 K. The studies of imaginary part of permittivity and tangent loss reveal that the prepared material may be a good candidate for low-frequency energy storage devices. An electrical relaxation phenomenon with non-Debye nature was observed in variations of imaginary parts of modulus and impedance. Electrical parameters deduced from the Nyquist plots analyses using an equivalent circuit reveal that the conduction process for the sample was caused due to the grain boundaries contribution.