Abstract
The objective of this research is to prepare a series of conducting polyaniline/graphene composites by in situ chemical oxidative method through polymerization of aniline in the existence of graphene of various weight percentages. The prepared composites were examined through Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy respectively. The conductivity and dielectric attributes exhibited composition dependent percolation behavior with enhanced properties for 15 wt% of graphene in polyaniline matrix. The Hall-effect studies were performed in the prepared composites and the investigations confirm that the composites behave as n-type semi-conductors. From the data obtained one can envisage remarkable improvement in the charge transport and dielectric properties of the composite at the percolation threshold due to the presence of nano-size additive in the composite. The temperature dependent conductivity in doped composites was increased by five fold in compare to pure PANI. The doping of graphene in PANI matrix, the improved dielectric parameters were achieved. The Hall effect studies were carried out in the prepared composites, the results shows that composites behaves like a n-type semiconductor. Further, the mechanical properties such as tensile stress and tensile strain were carried out in the prepared composites.