Abstract
A stoichiometry CdTe nano-structured powder was synthesized by chemical process. Thin films of different thicknesses (40, 60, and 100nm) of CdTe were prepared by thermal evaporation method onto silicon substrates. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of CdTe nanocrystalline thin films deposited on p-Si as heterojunction have been investigated. At low voltages, current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism. Also, various electrical parameters were determined from the I–V and C–V analysis. The thickness dependence of the obtained capacitance–voltage (C–V) characteristics was also considered.
► CdTe nanocrystalline thin films were prepared with different thickness. ► Electrical properties of CdTe nanocrystalline thin films have been investigated. ► All parameters were extracted. ► Our data indicate the possibility of a device application out of this material.