Abstract
GaN nanostructures with different layers were grown on quartz and silicon substrates, using the spin coating technique. The structural properties were studied by X-ray diffraction which indicated that the number and intensity of the peaks were changed as layers deposited changes. The cubic phase of GaN and the diffraction peaks of Ga2O3 were not observed; these results indicated that GaN output from the precursor was highly successful due to the complete transformation of all Ga2O3 layers into GaN ,.GaN morphological study was elaborated by field emission-scanning electron microscopy, the surface appears more homogeneous with more condensed particles, with particle size about 50 nm. Photoluminescence (PL) which revealed that the energy band gap ranged from (3.4 - 3.35) eV, for GaN/Si 3 and 7 layer, and (3.34 - 3.26) eV, for quartz 3 and 7 layer substrate respectively.