Abstract
CdSxSe1-x (x = 0.5) single crystal were grown using vapour phase technique. Gold surface barriers on this alloy have been investigated. The electrical characteristics were studied as a function of air annealing. From the analysis of C-2-V and l-V characteristics, the values of barrier height, diffusion potential and Fermi level were found to increase from 1.06 eV, 0.153 eV, and 1.239 eV to 1.58 eV, 0.189 eV, and 1.795 eV, respectively, after air annealing at 200-degrees-C for 2 min. This increase was associated with a reduction in the value of carrier concentration (from 1.48 x 10(15) to 0.36 X 10(15) cm-3) and an ideal value of the ideality factor was obtained. The result are interpreted on the basis of the role of oxygen at the junction using Schottky theory.