Abstract
The band offsets in pseudomorphic In(x)Ga1-xAs/Al0.2Ga0.8As quantum wells have been estimated by measuring the thermal emission of electrons from them by deep level transient spectroscopy and analyzing the data with an Arrhenius-type of expression for detailed balance. It is observed that, within the limits of accuracy of this technique, the offsets increase with increasing In content in the well, with DELTA-E(c)/DELTA-E(g) congruent-to 0.7 for x = 0.18.