Abstract
The residual damage in fluorine and boron ion implanted GaAs/AlGaAs has been studied using transmission electron microscopy both before and after rapid thermal processing. The results showed no extended defects in as-implanted materials. A dense network of interstitial dislocation loops has been observed in boron implanted samples after annealing. Most of these dislocation defects were located in GaAs layers rather than in AlGaAs layers. Only a small number of dislocation loops were found in the fluorine implanted and annealed material. Compared to boron, fluorine is a better candidate for neutral impurity induced disordering applications.