Abstract
80-nm nominal thick Al-Sn-In-doped Zinc Oxide (ITAZO) thin films were fabricated at low temperature by co-sputtering method from separated In2O3:SnO2 (90/10 wt%) (indium tin oxide, ITO) and ZnO:Al2O3 (98/2 wt%) (aluminum-doped zinc oxide, AZO) commercial ceramic targets. As-deposited sputtered ITAZO thin films showed amorphous nature and smooth surfaces when indium (In) element composition percentage varied from 56% to 70%. The optimal thin amorphous films presented superior electrical properties than the polycrystalline zinc oxide (ZnO) and indium oxide (In2O3) binary oxides counterparts, reaching mobilities higher than 22 cm(2)/Vs. Optical band gap energy was ranged between 3.44 and 3.51 eV, refractive indexes, from 1.98 to 2.2 and work functions, from 4.98 to 5.11 eV, varying the chemical layer composition. By controlling the ratio between the amounts of the compounds, thin film optoelectronic properties can be easily adjusted as function of device requirements. These materials could be a potential solution to be used as electrodes in photovoltaic devices.