Abstract
Owing to its low resistivity, high transmittance, and tunable optical band gap, ZnO is of great interest for optoelectronic applications. Herein, the sol-gel technique was used to synthesize un-doped and zirconium-doped zinc oxide (ZZO) nanostructures with different concentrations of Zirconium (Zr). X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis spectroscopy, and photoluminescence (PL) measurements were used to investigate the influence of Zr doping on the structural, optical, and electrical properties of developed nanostructures. XRD and SEM confirmed the increase in crystallite size with increasing concentrations of Zr. Raman analysis indicated the presence of oxygen vacancies in synthesized nanostructures. UV-Vis spectroscopy illustrated the blue shift of band gap and red shift of the absorption edge for ZZO nanostructures with increasing concentrations of Zr. For the measurement of electrical properties, the spin-coating technique was used to deposit un-doped and Zr-doped ZnO layers of similar to 165 nm thickness. The four-probe-point (4PP) method illustrated that the doping of Zr caused a reduction in electrical resistance. Hall Effect measurements showed a high value, 3.78 x 10(20) cm(-3), of the carrier concentration and a low value, 10.2 cm(2)/Vs, of the carrier mobility for the Zr-doped layer. The high optical transmittance of similar to 80%, wide band gap of 3.51 eV, low electrical resistivity of 1.35 x 10(-3) Omega center dot cm, and maximum carrier concentration of 3.78 x 10(20) cm(-3) make ZZO nanostructures one of the most promising candidates for the application of transparent conductive oxide (TCO) in optoelectronic devices.