Abstract
In this work we introduce the use of TiN/Fi(2)N layers as a back contact for Ta3N5 membranes of lifted-off anodic Ta3N5 nanotubular layers. In photoelectrochemical H-2 generation experiments under simulated AM 1.5G light, a shift in the onset potential of anodic photocurrents to lower potentials is observed, as well as a higher magnitude of the photocurrents compared to a conventional Ta3N5 nanotubular layer (Ta3N5/Ta,similar to 0.5 V-RHE). We ascribe this beneficial effect to the improved conductive properties of the TiNx-based back contact layer that enables a facilitated electron transport from the tantalum nitride based materials to the conductive substrate. (C) 2016 Elsevier B.V. All rights reserved.