Abstract
Knowledge about phase transitions in doped HfO2 and ZrO2-based films is crucial for developing future ferroelectric devices. These devices should perform in ambient temperature ranges with no degradation of device performance. Here, the phase transition from the polar orthorhombic to the nonpolar tetragonal phase in thin films is of significant interest. Detailed electrical and structural characterization is performed on 10 nm mixed HfxZr1-xO2 binary oxides with different ZrO2 in HfO2 and small changes in oxygen content. Both dopant and oxygen content directly impact the phase transition temperature between the polar and nonpolar phase. A first-order phase transition with thermal hysteresis is observed from the nonpolar to the polar phase with a maximum in the dielectric constant. The observed phase transition temperatures confirm trends as obtained by DFT calculations. Based on the outcome of the measurements, the classification of the ferroelectric material is discussed.