Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

Journal article

M. Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris, Michel Gendry and Mohamed Helmi Hadj Alouane

Journal of nanoscience and nanotechnology, Vol.11(10), pp.9251-9255

01/10/2011

PMID: 22400332

Abstract

Engineering Sciences

Micro and nanotechnologies

Microelectronics

1 Record Views

Title: Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing
Creators - without role: M. Hadj Alouane - INL - Spectroscopies et Nanomatériaux
B. Ilahi - Laboratoire de Micro-Optoelectronique et Nanostructures (LMON)
H. Maaref - Laboratoire de Micro-Optoelectronique et Nanostructures (LMON)
B. Salem - Laboratoire des Technologies de la Microélectronique
V. Aimez - Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke]
D. Morris - Université de Sherbrooke
Michel Gendry - INL - Hétéroepitaxie et Nanostructures
Mohamed Helmi Hadj Alouane - King Faisal University
Publication Details: Journal of nanoscience and nanotechnology, Vol.11(10), pp.9251-9255
Publisher: American Scientific Publishers
Identifiers: 9919757808331
Academic Unit: King Faisal University
Language: English
Resource Type: Journal article