Abstract
The structural features of thermally deposited Erythrosine B, (EB), thin films were indexed using X-ray diffraction. The dielectric properties, module of complex dielectric, and alternative current (AC) conductivity of EB thin films were investigated in dark conditions. The dependence of these properties on temperature (303-393 K) and frequency (0.042-100 kHz) was examined. With the rise in frequency, the dielectric constant and dielectric loss decreases. The maximum height of the barrier was determined from the dielectric loss analysis, based on the Giuntini model. The dielectric relaxation mechanism was described based on the complex dielectric (M ' and M '') unit. It was found that the calculated activation energy of the relaxation process was 0.083 eV. Also, it is found that the AC conductivity (sigma(ac)) increases as the temperature rises, and it complies with the universal power law sigma(ac) = A omega(s). The correlated barrier hopping model demonstrated the reliability of AC conductivity for EB thin films on the temperature. The activation energy (Delta E) was determined upon the AC conductivity temperature dependence.