Temperature and thickness dependence of photoconductivity and density-of-states distribution for Bi doped Ge20S80

Journal article

Peer reviewed

F ABD EL-SALAM, M Fadel and K Sedeek

Vacuum, Vol.45(8), pp.835-839

01/08/1994

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron states

Electronic transport in condensed matter

Exact sciences and technology

Impurity and defect levels

Other nonmetals

Photoconduction and photovoltaic effects

Photoconduction and photovoltaic effects; photodielectric effects

Physics

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Title: Temperature and thickness dependence of photoconductivity and density-of-states distribution for Bi doped Ge20S80
Creators - without role: F ABD EL-SALAM - Ain Shams University
M Fadel - Ain Shams University
K Sedeek - Al Azhar University
Publication Details: Vacuum, Vol.45(8), pp.835-839
Publisher: Elsevier
Identifiers: 9930215308331
Academic Unit: Taibah University
Language: English
Resource Type: Journal article