Temperature dependence characterization of metal–insulator–nonuniformly-doped semiconductor solar cell

Mahmoud Shaban; M. Abdel-Gawad El-Sayed

doi:10.1016/j.apsusc.2008.03.164

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Temperature dependence characterization of metal–insulator–nonuniformly-doped semiconductor solar cell

Journal article

Peer reviewed

Temperature dependence characterization of metal–insulator–nonuniformly-doped semiconductor solar cell

Mahmoud Shaban and M. Abdel-Gawad El-Sayed

Applied surface science, Vol.254(23), pp.7901-7904

30/09/2008

DOI: https://doi.org/10.1016/j.apsusc.2008.03.164

Abstract

Interface states

J– V characteristics

MIS solar cell

Nonuniform doping profile

Temperature dependence

Four layered metal–insulator–pp + semiconductor MIS solar cell device was simulated using a comprehensive numerical model. The semiconductor layer was assumed to be nonuniformly-doped in which additional drift electric field inside the semiconductor could be generated. The effects of the electrostatic and kinetic properties of the electronic states at the insulator-semiconductor interface were taken into account. The influences of the operating temperature on the device performance were studied in detail.

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Title: Temperature dependence characterization of metal–insulator–nonuniformly-doped semiconductor solar cell
Creators - without role: Mahmoud Shaban - South Valley University
M. Abdel-Gawad El-Sayed - Department of Electrical Engineering, Assuit University, Assuit 71518, Egypt
Publication Details: Applied surface science, Vol.254(23), pp.7901-7904
Publisher: Elsevier B.V
Identifiers: 9928584508331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article