Abstract
The emergence of semiconductor nanowires (NWs) as a new class of functional materials has generated a great interest in the scientific community in the fields of electronics, photonics and energy. In this work, we report on the optical properties of telecom-band emitting InAs/InP quantum rod-nanowires (QR-NWs) grown on silicon substrates by gold catalyst assisted molecular beam epitaxy (MBE). The energies of A and B band transitions in wurtzite InAs QRs are numerically evaluated by finite element method (FEM) as a function of the QR geometry and strain and compared with the experimental results obtained from photoluminescence (PL). Temperature-dependent optical properties of the QR-NWs are studied revealing that the integrated PL intensity keeps up to 30% of its value at 14 K which testify a high stability of the PL intensity. Furthermore, the investigated nanostructure shows a room temperature emission wavelength at 1.55 μm. These results demonstrate a great promise for telecom-band III-V nanoemitters monolithically grown on silicon.
•InAs/InP QR-NWs are grown on Si(001) substrates by ssMBE and VLS method.•PL Transitions energies is explained by a model based on FEM and the strain effects.•PL intensity at 300 K keeps up to 30% of its value at 14 K and operate at 1.55 μm.•Thermal parameters of WZ InAs were extracted using temperature-dependent PL study.