Abstract
This work presents the temperature-dependent analysis of heterojunction-free gallium nitride (GaN) FinFET through optimization of controlling gate parameters and dielectric materials. The temperature-dependent performance evaluation presents in terms of the transfer characteristic, transconductance, subthreshold swing (SS), and drain-induced barrier lowering (DIBL). Further, parametric assessment has been performed by gate length (
) and oxide thickness (
) variation for optimization. Moreover, the different gate dielectric materials (Al
, ZrO
and Si
) have also been used for different temperatures to optimize suitable gate dielectric material for improved performance of the device. Thus, GAN FinFET can be considered a promising component in high temperatures in IC and RF amplifiers.