Abstract
Calculations of the electron mobility of n-type InSb have been performed at different temperature regimes using relaxation time approximation method. The temperatures were classified into three main categories according to the electron mobility behavior. A high temperature range was considered from room temperature down to approximately 100 K. Intermediate temperature range was taken from 100 K down to 50 K. The low range was assumed from 50 K down to 10 K. In these temperature ranges a number of scattering sources have been discussed. Neutral impurity scattering, ionized impurity scattering and lattice scattering were analyzed. At high temperature regime, the intrinsic behavior of n-doped InSb was noticed. At intermediate temperature range the lattice scattering was recorded as the dominant scattering center. The ionized impurity scattering was thought to be the major one at low temperature region. Comparison with experimental results was also mentioned.