Abstract
This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions. The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal–Oxide–Semiconductor) devices is highlighted. Indeed, the acceleration of the degradation mechanisms is related, directly or indirectly, to the temperature variation. The tests carried out on the power amplifier will be "Life-test RF" type (accelerated aging under constant constraints) over a period of 1500 h to quantify the drifts of the parameters measured (mainly P
OUT
and I
DSS
) under reliability bench life-test at different temperatures. The parameters of devices have been characterized i.e. static, dynamic and RF before and after testing. This allows us to quantify the degradation, of the shift, of a certain number of electrical quantities (V
TH
, G
M
, R
DSON
, C
RSS
, etc.). The analysis of the physical results has been presented (simulator 2D ATLAS-SILVACO) to explain and observe the physical review of temperature impacts on power RF LDMOS performance. Finally, initial impacts analysis have been discussed.