Abstract
We report on the growth of Sb-rich indium antimonide (InSb) nanowires fabricated by dc electrodeposition in the pores of a gold-coated nanoporous anodic alumina oxide (AAO) template. An explanation of the various mechanisms of mass transport during successive stages of the growth process is also presented with experimental results confirming these growth stages. The 100 nm thick InSb nanowires that were grown using an electrolyte of pH 1.7 were found to be rich in antimony (Sb). The electrical properties of a single InSb nanowire was investigated by connecting the nanowire in a field-effect-transistor type configuration. The nanowires showed p-type conduction with a hole concentration of similar to 1.9 x10(16) cm(-3) and field effect hole mobility of similar to 507 cm(2)V(-1)s(-1). The device had a high on-off current ratio of the order of 10(3). Temperature-dependent transport measurements showed thermally activated Arrhenius conduction in the temperature range from 200-325 K, yielding an activation energy of 0.1 eV. The ability to obtain high density of p-type InSb nanowires without addition of any dopants opens up new opportunities for using these nanowires in fabrication of electronic devices. (C) 2017 The Electrochemical Society. All rights reserved.