Abstract
Tin sulfide (SnS) thin films were obtained by chemical bath deposition (CBD) using different concentrations of trisodium citrate (TSC) as a complexing agent. Nickel doping tin sulfide was carried out. The structural, electrical, chemical composition and optical properties of thin films were analyzed. The lowest resistivity (rho = 0.42 x 10(5)omega cm) is observed for Ni:SnS (6 at. %) The energy band gap values with the TSC addition are found in the range 1.36 eV-1.57 eV. The results demonstrated that tin sulfide (SnS) thin films have the potential to be used for optoelectronic applications.