Abstract
Normalized momentum distribution in log scale of generated hot electrons. Kn is the wavenumber in direction normal to the metal-semiconductor interface. Kt is the wavenumber in tangential direction, parallel to the metal semiconductor interface.
[Display omitted]
•An analytical calculation of hot electron transport from the Au thin layer to the TiO2 conduction band is discussed, this theoretical study is based on the quantum tunneling effect.•The presence of a tunnel current from the absorber to the collector under illumination, offering a method to extract carriers from a hot-electron distribution at few voltages of bias is presented in this study.•The influences of the doping concentrations of the semiconductor on the evolution of the current characteristics are also investigated and discussed.•The electrical characteristics are very sensitive to the thin of the barrier due to the varying of this parameter.
Semiconductor photonic crystals (MSPhC) were used to convert solar energy into hot electrons. An experimental model was designed by using metallic semiconductor photonic crystals (MSPhC). The designed MSPhC is based on TiO2/Au schottky contact. The model has similar nanocavity structure for broad gold absorption, but the materials on top of the cavity were changed to a metal and a semiconductor in order to collect the hot electrons. Detailed design steps and characterization have shown a broadband sub-bandgap photoresponse at a wavelength of 590 nm. This is due to the surface plasmon absorption by the wafer-scale Au/TiO2 metallic-semiconductor photonic crystal. Analytical calculation of the hot electron transport from the Au thin layer to the TiO2 conduction band is discussed. This theoretical study is based on the quantum tunneling effect. The photo generation of the hot electrons was undertaken at different wavelengths in Au absorber followed by tunneling through a schottky barrier into a TiO2 collector. The presence of a tunnel current from the absorber to the collector under illumination, offers a method to extract carriers from a hot-electron distribution at few bias voltages is presented in this study. The effects of doping different concentrations of the semiconductor on the evolution of the current characteristics were also investigated and discussed. The electrical characteristics were found to be sensitive to any change in the thickness of the barrier.