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The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers
Journal article

The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

C.L. Tan, H.S. Djie, Y. Wang, C.E. Dimas, V. Hongpinyo, Y.H. Ding and B.S. Ooi
IEEE photonics technology letters, Vol.21(1), pp.30-32
01/01/2009
DOI: https://doi.org/10.1109/LPT.2008.2008197

Abstract

Biomedical optical imaging Chemical lasers Nonequilibrium distribution Nonlinear optics Optical pumping Optical sensors Quantum dot lasers Quantum well lasers quantum-dash (Qdash) quantum-dot (QD) Semiconductor lasers Stimulated emission supercontinuum broadband laser Temperature distribution
We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

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