Abstract
The main focus of this framework is the preparation of CdTe nanocrystalline thin films (~120 nm) on single crystal p-Si wafers (270 μm) with Miller index (100) using thermal evaporation. Then, the In/n-CdTe/p-Si/Al solar cell was successfully fabricated. The dark I–V characteristics for the fabricated solar cell have been determined in range of 300–375 K and an applied voltage range of − 2 to 2 V. The fabricated solar cell's behavior was thoroughly explained. As a result, the important parameters for the fabricated solar cell such as the rectification ratio RR, the junction resistance RJ, ideality factor of solar cell n, the shunt resistance Rsh, the series resistance Rs, the barrier height created at the interface between the CdTe thin film and the p-Si wafer ϕb, the energy of trap level Et and the activation energy of carriers’s recombination in the depletion region ΔE were determined. Finally, the Poole–Frenkel βPF and Schottky βS parameters were computed.