Abstract
In the crust of earth, silicon (Si) is one of the two major elements. For plant growth and development, importance of Si remains controversial due to the widely differences in ability of plants to take up this element. In this paper, pot experiments were done to study Si roles in improving salt, drought or cadmium (Cd) stress tolerance in wheat. Up to full emergence, all pots were watered at 100% field capacity (FC) every other day with nutrient solution without any treatments. Fifteen days after sowing, pots were divided into four plots, each with 40 pots for no stress (control) and three stress treatments; drought (50% FC), salinity (200 mM NaCl) and cadmium (2 mM Cd). For all plots, Si was applied at four levels (0, 2, 4 and 6 mM). Under no stress condition, Si applications increased Si content and improved growth as a result of reduced electrolyte leakage (EL), malondialdehyde (MDA) and Na+ contents. Under stress conditions, Si supplementation conferred higher growth, gas exchange, tissue water and membranes stabilities, and K+ content, and had limited MDA and Na+ contents and EL compared to those obtained without Si. Compared to those without Si, enzyme (e.g., superoxide dismutase, catalase and peroxidase) activity was improved by Si applications, which were linked with elevated antioxidants and osmoprotectants (e.g., free proline, soluble sugars, ascorbic acid and glutathione) contents, might providing antioxidant defense against abiotic stress in wheat. The level of 4 mM Si was most effective for mitigating the salt and drought stress conditions, while 6 mM Si level was most influentially for alleviating the Cd stress condition. These results suggest that Si is beneficial in remarkably affecting physiological phenomena and improving wheat growth under abiotic stress.