The effect of RF power on the hydrogen content of sputtered amorphous silicon

Journal article

Peer reviewed

M. S Aida, L Mahdjoubi and S Sahli

Materials chemistry and physics, Vol.32(4), pp.349-351

01/12/1992

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Physics

Solid surfaces and solid-solid interfaces

Surface and interface dynamics and vibrations

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

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Title: The effect of RF power on the hydrogen content of sputtered amorphous silicon
Creators - without role: M. S Aida - Université Constantine 2
L Mahdjoubi - Université Constantine 2
S Sahli - Université Constantine 2
Publication Details: Materials chemistry and physics, Vol.32(4), pp.349-351
Publisher: Elsevier
Identifiers: 9939888108331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article