Abstract
(MACl
0.33
FAPbI
3
)
x
(Tri)
1−
x
;
(Tri = FA
0.85
MA
0.10
Cs
0.05
Pb(Br
0.10
I
0.90
)
3
,
x
= 0, 0.05, 0.1, 0.15) perovskite thin films were fabricated by a new method under an argon atmosphere. An X-ray diffraction technique was used to investigate the formed phases in different films. The effect of MACl
0.33
FAPbI
3
doping on the absorbance, transmittance, reflectance, extinction coefficient, refractive index, dielectric function, optical conductivity, dielectric loss energy function, nonlinear optical parameters, and the photoluminescence emission of formed films was studied. The optical bandgap (
E
g
) of the undoped film was increased from 1.53 to 1.55 eV as it was doped with different amounts of MACl
0.33
FAPbI
3
. At 500 nm, the absorbance of doped film with 10% MACl
0.33
FAPbI
3
has a maximum value as compared with other doped films. A device based on the undoped film with MACl
0.33
FAPbI
3
has a short-current density (
J
SC
), an open-circuit potential (
V
OC
), a fill factor (FF), and a power conversion efficiency (PCE) of 23.73 mA cm
−2
, 0.864 V, 0.62, and 12.71%, respectively. Both
FF
and PCE values were enhanced to 0.676 and 14.86%, respectively, as the film doped with 5% MACl
0.33
FAPbI
3
.