Abstract
The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar (112¯2) plane and the polar (0001) plane had the high In contents, while specimens incorporating the non-polar (101¯0) plane had the low In content. The In content was most readily increased in the QWs produced using (112¯2), (0001), (101¯1) and (101¯0) planes, and the surface morphologies of samples made on the (0001), (112¯2), (202¯1) and (202¯1¯) planes were smoother than those of samples fabricated on the other planes.
•Eight GaN substrates of various orientations were used to make InGaN/GaN QWs.•The impact of plane orientations on In content in QWs was researched.•The impact of plane orientations on surface morphology of QWs was researched.•The impact of plane orientations on optical performance of QWs was researched.•The (112¯2)plane has the higher In content, but non-polar (101¯0)plane has the lower In content.•The (202¯1) and (202¯1¯) planes can provide higher output power and smoother surface morphologies.