Abstract
Using first-principles calculations, the effects of Yb2+ substitutional doping on structural, electronic, and optical properties of a series of perovskite compounds CsCaX (3) (X: Cl, Br, I), have been investigated. We employed generalized gradient approximation (GGA) and HSE hybrid functional to study the electronic and optical properties. A series of pristine CsCaX (3) (X: Cl, Br, I) is characterized as a non-magnetic insulator with indirect bandgap perovskite materials. These phosphor materials are suitable candidates for doping with lanthanide series elements to tune their electronic bandgaps according to our requirements because of their wide bandgaps. The calculated electronic bandgaps of CsCaX (3) (X: Cl, Br, I) are 3.7 eV (GGA) and 4.5 eV (HSE) for CsCaI3, 4.5 eV (GGA) and 5.3 eV (HSE) for CsCaBr3, and 5.4 eV (GGA) and 6.4 eV (HSE) for CsCaCl3. According to formation energies, the Yb2+ doped at the Ca-site is thermodynamically more stable as compared to all possible atomic sites. The electronic band structures show that the Yb2+ doping induces defective states within the bandgaps of pristine CsCaX (3) (X: Cl, Br, I). As a result, the Yb2+ doped CsCaX (3) (X: Cl, Br, I) become the direct bandgap semiconductors. The defective states above the valence band maximum are produced due to the f-orbital of the Yb atom. The impurity states near the conduction band minimum are induced due to the major contribution of d-orbital of the Yb atom and the minor contribution of s-orbital of the Cs atom. The real and imaginary parts of the dielectric function, optical reflectivity, electron energy loss spectrum, extinction coefficient, and refractive index of pristine and Yb2+ doped CsCaX (3) (X: Cl, Br, I) were studied. The optical dispersion results of dielectric susceptibility closely match their relevant electronic structure and align with previously reported theoretical and experimental data. We conclude that the Yb2+ doped CsCaX (3) (X: Cl, Br, I) are appealing candidates for optoelectronic devices.