The influence of capping layers on pore formation in Ge during ion implantation

Journal article

Peer reviewed

H. S. Alkhaldi, Tuan T. Tran, F. Kremer and J. S. Williams

Journal of applied physics, Vol.120(21), p.215706

07/12/2016

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Title: The influence of capping layers on pore formation in Ge during ion implantation
Creators - without role: H. S. Alkhaldi - Australian National University
Tuan T. Tran - Australian National University
F. Kremer - Australian National University
J. S. Williams - University of Canberra
Publication Details: Journal of applied physics, Vol.120(21), p.215706
Identifiers: 9915404008331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article