Abstract
The challenge of increasing and maintaining a high yield for 6 '' GaAs crystal growth is of utmost importance for meeting the price requirements dictated by today's requirements for semi-insulating GaAs substrates. For maintaining a low dislocation density in the grown ingots, the growth process time is typically long and, sometimes, the final ingots may exhibit twins and poly-crystalline formation. These defects may occur at the beginning of the cylindrical part of the ingot, or even at the conical part of pBN crucible so the whole ingot is rejected. On the other hand, these defects may appear further away from the seed and the location of the onset of these defects will determine the extent of the useful (production worthy) crystal length, also known as "yield". The reasons for the onset of these defects are, however, not fully understood [M. Jurisch, F. Borner, Th. Bunger, St. Eichler, T. Flade, U. Kretser, A. Kohler, J. Stenzenberger, B. Weinert. J. Crystal Growth 275 (2005) 283].
In this study, we conducted numerical simulation using the transient two-dimensional mathematical model of the GaAs crystal growth by vertical gradient freeze method (VGF-method). We defined a new parameter "A" that is equal to the scatter of heat fluxes at m/c interface. Our study showed that some correlation exists between the defect appearance and A-value at m/c interface close to crucible wall. We have found that the frequency of a totally bad crystal length is higher if the A-value exceeds a certain value. Close to the crystal tail the scatter must be less than a defined A-value at the beginning of crystallization. Reduction in A-value was found to occur due to anomalies in the melt flow close to the m/c interface and crucible wall leading to the higher frequency of defects close to the crystal tail.
Based on the correlation found, we developed a new technology regime that results in crystals grown with a lower frequency of defect occurrence at crucible wall. (C) 2007 Elsevier B.V. All rights reserved.