Abstract
The photonic crystals based semiconductor quantum dots have revealed auspicious characteristics for the optoelectronic devices. The most difficult way to achieve lasing lies in the creation of sufficient nonradiated Auger recombination’s process. Therefore, there is a real demand to enhance the lasing efficiency, either by increasing the concentration of quantum dots or through the improving of the optical gain or optimizing the optical waveguide. In this article, Pb1-xEuxSe photonic QDs have been prepared via polymethoxyethylhexyloxyphenylenevinylene assisted polyol technique for improving the quantum yield and amplify the photonic gains. The XRD inspects the cubic phase of the Pb1-xEuxSe photonic QDs. The TEM reveals the increasing of the sizes of these QDS from 2.2 nm to 8.1 nm due to the doping of Eu-atoms. The Eu-dopant decreased bandgaps of PbSe nanocrystals from 1.56 eV to 1.32 eV because of the creation of sublevels within the PbSe badgap. The emission spectra revealed the amplification of photonic gains which resulted in the increase of emitted photons intensity by 35 time and the increase of sharpness of the spectral bandwidth by 4 times. The quantum yield improved to 88 %. The amplified optoelectronic gain and high quantum efficiency renders the Pb1-xEuxSe photonic QDs to be used for IR-imaging and optical communications application.