Abstract
This work presents a novel structure of Au/PPy-MWCNTs/TiO
2
/Al
2
O
3
/
n
-Si/Al which hasn't been explored before. This structure is applied in the manufacture of diodes, supercapacitors, high memory devices, and electronic devices. The results can be summarized as the imaginary part of impedance
Z
″ has positive and negative values at low and high frequencies. On the other hand, at high and mid-frequency,
Z
′ takes only negative values. This behavior of
Z
″ and
Z
′ is also appeared in the Cole–Cole diagram at different temperatures and voltages. The real and imaginary parts of modules
M
′,
M
″ at different temperatures and voltages have positive and negative values in frequency rage ln
f
(0–8). The imaginary part of modulus
M
″ has positive values within frequency range ln
f
(8–12) while
M
′ has positive values at ln
f
(8–16). The real and imaginary parts of ac conductivity
σ
′
ac
,
σ
″
ac
have positive values at low frequencies, however, at mid and high frequencies, negative values are seen, resulting in peaks. The
I
–
V
measurements have been carried out to investigate the electrical parameters and conduction mechanism.