Abstract
In this research work, we have fabricated junction diode based on barium thin films. The film was coated on a glass plate and silicon substrate by low-cost spray pyrolysis coating technique via different substrate temperature as 400 degrees C, 450 degrees C, 500 degrees C and 550 degrees C. Structure, surface morphology, optical and electrical characteristics of barium films were investigated. In particular, the I-V characteristic diode parameters of Ag/Ba/n-Si/Ag diodes in different temperature were analysed. The maximum barrier height (Phi(b)) for the diode fabricated substrate at temperature 550 degrees C was observed as 0.78eV. Also, from minimum ideality factor (n) of the diode parameters, the maximum substrate temperature was found. From I to V analysis it was revealed that the fabricated diodes were more suitable for the growth of high-quality optoelectronic applications.