Abstract
A new silicon-based luminescence material-C( Film) /Si( SiO2) ( nanometer particles)/C( Film) ( abbr. C(F)/Si(SiO2)(N)/C(F)) is made by sputtering silicon nano-particles on the amorphous carbon film in Ar gas firstly, then depositing amorphous carbon film on silicon nano-particles layer in vacuum. Finally, it has been annealed at 400,650 and 750degreesC for 1h respectively. The photoluminescence (PL) of the sample is tested by fluorescence spectrophotometer. Excited by 250 nm UV-Iight, the unannealed sample gives a strong PL1 band around 398 nm (3.12 eV). After annealed at 650degreesC, the sample gives not only PL1 band, but also gives another strong PL2 band around 360 nm (3.44 eV). The shape and peak position of PL1 and PL2 are independent on annealing temperature and excited wavelength. On the contrary, the intensities of PL1 and PL2 are strongly dependent on it: their intensities are the lowest after the sample annealed at 400degreesC and the highest after annealed at 650degreesC. The shorter the excited