Abstract
The solid state reaction between Cu and a-Si films was investigated at 150-200 degrees C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu3Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165 degrees C and 200 degrees C. At 150 degrees C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135 degrees C [Acta Materialia, 61 (2013) 7173-7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd.