Abstract
Interestingly, anomalously high ideality factors (n > 2) in the prepared Au/SnO2-Si(n)/Al solar cell junction in the interim bias voltage range were obtained in our previous paper. Theoretical models were proposed to clarify the much higher ideality factors. The temperature dependence of the solar cell ideality factor can give valuable information about the main recombination mechanism in the cell. We find a significant agreement of the temperature dependence with a theory derived by Padovani et al. We conclude that tunneling currents play an important role inside the cell.