Abstract
Ab initio based simulations have been proven in the past to be and still are a valuable and indispensable tool in the field of III-nitride semiconductors. They have been successfully used to explain, describe and guide growth and characterization experiments and to address a large variety of material problems at different length scales. In the present report we review on five selected topics which span different length scales, various method developments, and diverse material properties that have been theoretically addressed within the research group "Physics of nitride-based, nanostructured, light emitting devices."
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